V-band GaAs MMIC low-noise and power amplifiers-Reference-Cited by-同舟云学术

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V-band GaAs MMIC low-noise and power amplifiers

Published:1988-12 Issue:12 Volume:36 Page:1966-1975
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Hing-Loi Hung ,Hegazi G.M.,Lee T.T.,Phelleps F.R.,Singer J.L.,Huang H.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx1/22/632/00017441.pdf?arnumber=17441

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrodeposition of Crystalline GaAs on Liquid Gallium Electrodes in Aqueous Electrolytes;Journal of the American Chemical Society;2012-12-24

2. A 60 GHz power amplifier using lange couplers in GaAS 0.15 μm pHEMT process;Microwave and Optical Technology Letters;2012-06-18

3. Millimeter-wave design considerations for power amplifiers in an SiGe process technology;IEEE Transactions on Microwave Theory and Techniques;2006-01

4. The potential of III-V semiconductors as terrestrial photovoltaic devices;Progress in Photovoltaics: Research and Applications;2006

5. A seven-parameter nonlinear I–V characteristics model for sub-μm range GaAs MESFETs;Solid-State Electronics;2004-07

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