Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene

Published:2023-11-27 Issue: Volume: Page:161-164
ISSN:
Container-title:2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
language:
Short-container-title:

Author:

Zhou Jizong¹,Xu Yu²,Wang Xiao²,Wang Yuning²,Yue Long²,Wang Jianfeng²,Cao Bing¹,Xu Ke²

Affiliation:

1. School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University,Suzhou,P. R. China,215006

2. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy Sciences (CAS),Suzhou,P. R. China,215123

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399753.pdf?arnumber=10399753

Reference13 articles.

1. Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate

2. Optical properties of AlGaN-based deep-ultraviolet LED grown on graphene/SiC

3. Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

4. Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation

5. Growth of high quality GaN on (0001) 4H-SiC with an ultrathin AlN nucleation layer

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP