Simulation of Epitaxial Growth of Silicon Carbide in a Horizontal Hot-wall CVD Reaction Chamber-Reference-Cited by-同舟云学术

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Simulation of Epitaxial Growth of Silicon Carbide in a Horizontal Hot-wall CVD Reaction Chamber

Published:2023-11-27 Issue: Volume:39 Page:14-17
ISSN:
Container-title:2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Tian Jing¹,Tang Zhuorui¹,Tang Hongyu¹,Fan Jiajie¹,Zhang Guoqi²

Affiliation:

1. Institute of Future Lighting, Academy for Engineering & Technology; Shanghai Engineering Technology Research Center for SiC Power Device, Fudan University,Shanghai,China,200433

2. Research Institute of Fudan University in Ningbo,Ningbo,China,315336

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399702.pdf?arnumber=10399702

Reference8 articles.

1. The third generation wide bandgap power semiconductor and its application development status;Cai;Science & Technology Review,2021

2. Growth and Doping Modeling of SiC-CVD in a Horizontal Hot-Wall Reactor

3. Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System

4. CFD coupled kinetic modeling and simulation of hot wall vertical tubular reactor for deposition of SiC crystal from MTS

5. CFD modeling and optimal design of SiC deposition on the fuel combustion nozzle in a commercial CVD reactor

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