High Current Density and High Breakdown Voltage Enhancement-Mode Gate-Controlled Heterojunction Vertical β-Ga<sub>2</sub>O<sub>3</sub> MOSFET-Reference-Cited by-同舟云学术

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High Current Density and High Breakdown Voltage Enhancement-Mode Gate-Controlled Heterojunction Vertical β-Ga₂O₃ MOSFET

Published:2023-11-27 Issue: Volume: Page:287-290
ISSN:
Container-title:2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Jiang Zhuolin¹,Zhao Kai¹,Deng Hongru¹,Wei Yuxi¹,Wei Jie¹,Luo Xiaorong¹

Affiliation:

1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399670.pdf?arnumber=10399670

Reference7 articles.

1. Experimental Investigation on Threshold Voltage Instability for β-Ga₂O₃ MOSFET Under Electrical and Thermal Stress

2. Nonuniform Mechanism for Positive and Negative Bias Stress Instability in β-Ga₂O₃ MOSFET

3. Experimental investigation on the instability for NiO/β-Ga₂O₃ heterojunction-gate FETs under negative bias stress

4. Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV

5. 702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation

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