Analysis of SiC MOSFET dI/dt and its temperature dependence
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/8168197/8216002/08216149.pdf?arnumber=8216149
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Development of a steady state electrothermal cosimulation model of SiC power modules;International Journal of Heat and Mass Transfer;2024-07
3. Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
4. Online Junction Temperature Estimation Method for SiC MOSFETs Based on the DC Bus Voltage Undershoot;IEEE Transactions on Power Electronics;2023-04
5. Practical Design Consideration and Experimental Validation of SiC MOSFET-based 50kW Three-phase PWM Rectifier for EV Charging Station;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19
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