A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters-Reference-Cited by-同舟云学术

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A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters

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Container-title:Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)
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Author:

Seonghearn Lee

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7249/19558/00904215.pdf?arnumber=904215

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate RF C-V Method to Extract Effective Channel Length and Parasitic Capacitance of Deep-Submicron LDD MOSFETs;JSTS:Journal of Semiconductor Technology and Science;2015-12-30

2. Consistent DC and RF MOSFET Modeling Using an $S$-Parameter Measurement-Based Parameter Extraction Method in the Linear Region;IEEE Transactions on Microwave Theory and Techniques;2015-12

3. Accuracy Analysis of Extraction Methods for Effective Channel Length in Deep-Submicron MOSFETs;JSTS:Journal of Semiconductor Technology and Science;2011-06-30

4. Improved extraction method for effective channel length of deep-submicrometre MOSFETs;Electronics Letters;2004

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