Demonstration of BaTiO3 Integrated kV-class AlGaN/GaN Schottky Barrier Diodes with Record Average Breakdown Electric Field
Author:
Affiliation:
1. The Ohio State University,Department of Electrical and Computer Engineering,Columbus,OH,USA,43210
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813622.pdf?arnumber=9813622
Reference29 articles.
1. Low ON-Resistance GaN Schottky Barrier Diode With High $V_{\mathrm{ON}}$ Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology
2. 2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
3. 2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure
4. 3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure
5. Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking
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