Modeling of In-chip Current-Temperature Distribution of SiC Power MOSFETs during Fast Switching Events-Reference-Cited by-同舟云学术

Modeling of In-chip Current-Temperature Distribution of SiC Power MOSFETs during Fast Switching Events

Published:2022-05-22 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
language:
Short-container-title:

Author:

Race Salvatore¹,Kovacevic-Badstuebner Ivana¹,Stark Roger¹,Tsibizov Alexander¹,Popescu Dan²,Popescu Bogdan²,Grossner Ulrike¹

Affiliation:

1. ETH Zurich,Advanced Power Semiconductor Laboratory,Zurich,Switzerland

2. Infineon Technologies AG,Neubiberg,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813610.pdf?arnumber=9813610

Reference8 articles.

1. Circuit-Based Electrothermal Modeling of SiC Power Modules With Nonlinear Thermal Models

2. New generation 6.5 kV SiC power MOSFET

3. Towards digital twins for the optimization of power electronic switching cells with discrete SiC power MOSFETs;race;to be presented at Int Exhib and Conf for Power Electronics Intelligent Motion Renewable Energy and Energy Management (PCIM Europe),2022

4. Distributed Modeling of Layout Parasitics in Large-Area High-Speed Silicon Power Devices

5. Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Role of the Gate Resistance and Device Variability on the Dynamic Performance of Parallel SiC Power MOSFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Evidence of Dynamic Input Capacitance of SiC Power MOSFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. Gate Impedance Analysis of SiC power MOSFETs with SiO₂ and High-k Dielectric;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28