Author:
Volkov N.A.,Telegin K.Yu.,Gultikov N.V.,Sabitov D.R.,Andreev A.Yu.,Yarotskaya I.V.,Padalitsa A.A.,Ladugin M.A.,Marmalyuk A.A.,Shestak L.I.,Kozyrev A.A.,Panarin V.A.
Abstract
Abstract
The purpose of this work is to improve the current – voltage (I – V) performance of semiconductor lasers based on broadened asymmetric waveguide InGaAs/AlGaAs/GaAs separate-confinement double heterostructures. We analyse the effect of AlGaAs waveguide layer composition on the output characteristics of the lasers and demonstrate that the decrease in the series resistance of the lasers and the threshold voltage of their I – V characteristic as a result of a decrease in the percentage of AlAs in the waveguide layers shifts the drop in the differential quantum efficiency of the lasers to higher pump currents, despite the decrease in the energy depth of the quantum wells in the active region.
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献