Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%-Reference-Cited by-同舟云学术

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Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

Published:2017-08-31 Issue:8 Volume:47 Page:693-695
ISSN:1063-7818
Container-title:Quantum Electronics
language:
Short-container-title:Quantum Electron.

Author:

Ladugin M A,Marmalyuk A A,Padalitsa A A,Telegin K Yu,Lobintsov A V,Sapozhnikov S M,Danilov A I,Podkopaev A V,Simakov V A

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1063-7818/47/i=8/a=693/pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Parametric laser rangefinder with a passive thermal stabilization system;Journal of Optical Technology;2024-03-28

2. GaAs/AlGaAs- and InGaAs/AlGaAs-Heterostructures for High-Power Semiconductor Infrared Emitters;Technical Physics;2024-02

3. Semiconductor Lasers with Improved Lasing Characteristics;Bulletin of the Lebedev Physics Institute;2023-09

4. High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures;Quantum Electronics;2022-02-01

5. Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm;Quantum Electronics;2022-02-01

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