Author:
Slipchenko S.O.,Romanovich D.N.,Kapitonov V.A.,Bakhvalov K.V.,Pikhtin N.A.,Kop’ev P.S.
Abstract
Abstract
High-power quasi-cw semiconductor lasers with an emitting aperture 800 μm wide and a continuous p-contact are developed. Laser operation with a pulse duration of 1 ms, a repetition rate of 10 Hz, and a maximum peak power of 87 W at a wavelength 1060 – 1070 nm is demonstrated under pumping by current pulses with am amplitude of 97 A. Experimental estimates show that overheating of the active region at the end of the laser pulse at a current of 97 A may reach 36.7 °C.
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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