Author:
Butaev M.R.,Kozlovsky V.I.,Skasyrsky Ya.K.
Abstract
Abstract
An optically pumped semiconductor laser based on a CdS/ZnSe heterostructure containing 10 coupled quantum wells is studied. The structure is grown by metalorganic vapour phase epitaxy on a GaAs substrate. A microcavity with interference dielectric mirrors is fabricated based on this structure. At room temperature under longitudinal pumping by an InGaN/GaN pulsed laser diode with a wavelength of 438 nm, the peak power of the microcavity reaches 100 mW at a wavelength of 508 nm and a pulse duration of 65 ns.
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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