Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p

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Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p — n junction

Published:1999-04-30 Issue:4 Volume:29 Page:283-284
ISSN:1063-7818
Container-title:Quantum Electronics
language:
Short-container-title:Quantum Electron.

Author:

Bezotosnyi V V,Davydova Evgeniya I,Zalevskii I D,Konyaev V P,Marmalyuk Aleksandr A,Padalitsa A A,Shishkin Viktor A

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1063-7818/29/i=4/a=L01/pdf

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1. Investigation of photoelectric performance of laser diode by regulation of p-waveguide layer thickness;Optik;2020-01

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