Influence of growth temperature of KTiOAsO4 single crystals on their physicochemical parameters and formation of domain structures

Abstract

Abstract A potassium titanyl arsenate (KTiOAsO4, KTA) crystal 50 × 80 × 60 mm in size has been grown by upgraded Czochralski method from flux (TGGS) with a decrease in temperature from 900 to 770 °C during pulling. It is shown that the spectroscopic properties of the parts of KTA crystals grown at 900 and 770 °C are close, whereas the electrical conductivity of the low-temperature (770 °C) KTA part turned out to be an order of magnitude lower than that of the high-temperature part. Visualisation of the domain structure by second-harmonic generation microscopy revealed a more efficient domain intergrowth (throughout the sample) in the low-temperature KTA, which is important for forming a regular domain structure (RDS) in a KTA-based nonlinear optical element. It is established that the quantum efficiency of parametric generation of light in the RDS formed in low-temperature KTA is several times higher than in the case of high-temperature KTA. The results obtained are important for optimising RDS parameters.