Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure
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Published:2019-10-01
Issue:10
Volume:49
Page:909-912
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ISSN:1063-7818
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Container-title:Quantum Electronics
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language:
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Short-container-title:Quantum Electron.
Author:
Andreev A.Yu.,Bagaev T.A.,Butaev M.R.,Gamov N.A.,Zhdanova E.V.,Zverev M.M.,Kozlovsky V.I.,Skasyrsky Ya.K.,Yarotskaya I.V.
Abstract
Abstract
We report the results of a study of an e-beam pumped vertical-external-cavity surface-emitting laser (VECSEL) based on an InGaAs/AlGaAs heterostructure. Metalorganic chemical vapour deposition (MOCVD) is employed to grow two structures of different design, which contain 10 quantum wells (QWs) and a built-in distributed Bragg reflector (DBR) mirror. Under repetitively pulsed electron-beam excitation (50 Hz, 250 ns), a peak output power of 5.5 W is achieved at a wavelength of 2.5 W and an output power of 2.5 W at 1.013 μm with a total convergence angle no larger than 20 mrad.
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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