1. 1) M. Durlam, P. Naji, A. Omair, M. DeHerrera, J. Calder, J. M. Slaughter, B. Engle, N. Rizzo, G. Grynkewich, B. Butcher, C. Tracy, K. Smith, K. Kyler, J. Ren, J. Molla, B. Feil, R. Williams, and S. Tehrani : VLSI Circuits Digest of Technical Papers (2002).
2. Progress and outlook for MRAM technology
3. 3) Y. Saito, M. Amano, K. Nakajima, S. Takahashi, M. Sagoi, and K. Inomata : IEEE Trans. Magn., 31, 1979 (2001).
4. 4) S. Iura, H. Kubota, Y. Ando, and T. Miyazaki : J. Magn. Soc. Jpn., 26, 839 (2001).
5. Growth mechanism of thin insulating layer in ferromagnetic tunnel junctions prepared using various oxidation methods