Orientational Dependence of Magnetic Tunnel Junctions Using an Fe3O4 Layer.-Reference-Cited by-同舟云学术

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Orientational Dependence of Magnetic Tunnel Junctions Using an Fe3O4 Layer.

Published:2001 Issue:3−1 Volume:25 Page:155-158
ISSN:0285-0192
Container-title:Journal of the Magnetics Society of Japan
language:
Short-container-title:J. Magn. Soc. Jpn.

Author:

Takeuchi M.,Hiramoto M.,Matsukawa N.,Adachi H.,Okamura S.,Shiosaki T.,Sakakima H.

Publisher

The Magnetics Society of Japan

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

2. Conduction Threshold, Switching, and Hysteresis in Quantum Dot Arrays

3. Magnetic Tunneling Effect in Ferromagnet/Al2O3/Ferromagnet Junctions.

4. Magnetic tunneling effect in Fe/Al2O3/Ni1−xFex junctions

5. Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxialLa0.67Sr0.33MnO3tunnel junctions

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films;Materials Science and Engineering: R: Reports;2010-05

2. Synthesis and properties of epitaxial electronic oxide thin-film materials;Materials Science and Engineering: R: Reports;2004-03

3. Development of half-metallic ultrathin Fe3O4 films for spin-transport devices;Applied Physics Letters;2002-02-04

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