Bandgap Tuning and Quenching Effects of In(Zn)P@ZnSe@ZnS Quantum Dots

Author:

Lee Sang Yeon,Park Su Hyun,Byun Gyungsu,Kim Chang-Yeoul

Abstract

InP quantum dot (QDs) have attracted researchers’ interest due to their applicability in quantum dot light-emitting displays (QLED) or biomarkers for detecting cancers or viruses. The surface or interface control of InP QD core/shell has substantially increased quantum efficiency, with a quantum yield of 100% reached by introducing HF to inhibit oxide generation. In this study, we focused on the control of bandgap energy of quantum dots by changing the Zn/(In+Zn) ratio in the In(Zn)P core. Zinc incorporation can change the photoluminescent light colors of green, yellow, orange, and red. Diluting a solution of as-synthesized QDs by more than 100 times did not show any quenching effects by the Förster resonance energy transfer phenomenon between neighboring QDs.

Funder

National Research Foundation of Korea

Korea Institute of Ceramic Engineering and Technology

Publisher

The Korean Powder Metallurgy & Materials Institute

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