Laser-dressed binding energy of a hydrogen impurity in the GaAs/AlxGa1−xAs nanostructure in the presence of a static electric field
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. Hydrogenic donor impurities in $\delta$ -doped cylindrical quantum dots under intense laser field;Laser Physics;2019-03-20
4. Intense laser field effects on the intersubband optical absorption and refractive index change in the δ-doped GaAs quantum wells;Chemical Physics;2017-04
5. The effect of the intense laser field on the electronic states and optical properties of n-type double δ -doped GaAs quantum wells;Optical Materials;2017-02
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