Photoinduced infrared spectroscopy of bound-to-bound and bound-to-continuum transitions in SiGe/Si quantum wells-Reference-Cited by-同舟云学术

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Photoinduced infrared spectroscopy of bound-to-bound and bound-to-continuum transitions in SiGe/Si quantum wells

Published:1996-01 Issue:1 Volume:19 Page:33-38
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Boucaud P.,Wu L.,Moussa Z.,Julien F.H.,Lourtioz J.-M.,Sagnes I.,Campidelli Y.,Badoz P.-A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coulomb interaction of electron gas in MQWs Si/Si1−xGex/Si;Materials Science and Engineering: C;2008-07

2. Recombination of carriers in SiGe/Si heterostructures measured by photomodulated intersubband absorption;Physica E: Low-dimensional Systems and Nanostructures;1998-07

3. Absorption and emission spectroscopy of intersubband transitions in Si[sub 1−x]Ge[sub x]/Si quantum wells;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05

4. Recombination processes in SiGe/Si quantum wells measured by photoinduced absorption spectroscopy;Physical Review B;1997-12-15

5. Photoluminescence and intersubband absorption spectroscopy of interdiffused Si/SiGe quantum wells;Journal of Applied Physics;1996-08

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