The effect of persistent photoconductivity in undoped GaInP/GaAs quantum wells-Reference-Cited by-同舟云学术

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The effect of persistent photoconductivity in undoped GaInP/GaAs quantum wells

Published:1995-09 Issue:2 Volume:18 Page:147-152
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Ahoujja M.,Elhamri S.,Newrock R.S.,Mast D.B.,Mitchel W.C.,Razeghi Manijeh,Erdtman M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of quantum oscillations in ZnO/CdO heterostructure;Journal of Applied Physics;2021-09-07

2. Dependence of GaAs:Si persistent photoconductivity on temperature and α-particle irradiation;Microelectronics Journal;2005-01

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