Analytic modelling for current–voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. On the improvement of gate voltage swings in delta -doped GaAs/In/sub x/Ga/sub 1-x/As/GaAs pseudomorphic heterostructures
2. Enhanced resonant tunneling real-space transfer in δ-doped GaAs/InGaAs gated dual-channel transistors grown by MOCVD
3. A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor
4. High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor
5. GaInP/GaAs double heterojunction bipolar transistor with high f/sub T/, f/sub max/, and breakdown voltage
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor;Japanese Journal of Applied Physics;2002-10-15
2. Analytic modelling for current–voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors [Superlattices and Microstructures, Vol. 30, No. 3, 2001, pp. 145–158];Superlattices and Microstructures;2002-08
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