Chopped InGaAs/InP quantum wells for a polarization-independent space switch at 1.53 μm-Reference-Cited by-同舟云学术

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Chopped InGaAs/InP quantum wells for a polarization-independent space switch at 1.53 μm

Published:2000-05 Issue:5-6 Volume:27 Page:509-514
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Dorren B.H.P.,Silov A.Yu.,Haverkort J.E.M.,Leys M.R.,Maat D.H.P.,Zhu Y.,Groen F.H.,Wolter J.H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference4 articles.

1. InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy

2. Interface manipulation in multiple-layer structures grown by chemical beam epitaxy

3. X-ray interference effect as a tool for the structural investigation of GaInAs/InP multiple quantum wells

4. Proceedings of the IEEE/LEOS Symposium Benelux Chapter, Gent, 1998 (p. 133);Dorren,1998

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