IMPACT OF γ-IRRADIATION ON DIELECTRIC AND ELECTRIC PROPERTIES OF TlInS2<V> CRYSTALS-Reference-Cited by-同舟云学术

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IMPACT OF γ-IRRADIATION ON DIELECTRIC AND ELECTRIC PROPERTIES OF TlInS2<V> CRYSTALS

Published:2019-04-01 Issue: Volume: Page:30-33
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Container-title:Problems of Atomic Science and Technology
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Author:

Sardarly R.M.,Samedov O.A.,Salmanov F.T.,Aliyeva N.A.

Abstract

The effect of γ-irradiation on the relaxor properties of the TlInS2<V> compound have been studied. It is established that in this compound the Vogel-Fulcher temperature (Tf) shifts towards the low temperatures, and the Burns temperature (Td) moves towards the high temperatures. As a result, the temperature range for the existence of a relaxor state extends by ~ 40 K. The presence of hopping conduction is established and the parameters characterizing this mechanism are determined.

Publisher

Problems of Atomic Science and Technology

Reference15 articles.

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