Contact Area-Dependent Electron Transport in Au/n-type Ge Schottky Junction-Reference-Cited by-同舟云学术

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Contact Area-Dependent Electron Transport in Au/n-type Ge Schottky Junction

Published:2016-08-31 Issue:8 Volume:26 Page:412-416
ISSN:1225-0562
Container-title:Korean Journal of Materials Research
language:
Short-container-title:Korean. J. Mater. Res.

Author:

Kim Hogyoung, ,Lee Da Hye,Myung Hye Seon

Funder

Seoul National University of Science and Technology

Publisher

The Materials Research Society of Korea

Subject

General Materials Science

Link

http://ocean.kisti.re.kr/downfile/crosscheck/mrsk/JAKO201625654348154.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploration of microstructural, chemical states and electrical features of the Au/Er2O3/n-GaN MIS diode with a Er2O3 interlayer;Materials Science and Engineering: B;2023-12

2. Reduction of reverse leakage current at the TiO2/GaN interface in field plate Ni/Au/n-GaN Schottky diodes;Semiconductor Physics, Quantum Electronics and Optoelectronics;2021-11-23

3. Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes;ACS Applied Materials & Interfaces;2018-04-05

4. Dislocation-Related Electron Transport in Au Schottky Junctions on AlGaN/GaN;Transactions on Electrical and Electronic Materials;2018-02-27

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