Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities-Reference-Cited by-同舟云学术

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Intermixing in InGaAs/AlGaAs quantum well structures induced by the interdiffusion of Si impurities

Published:2020 Issue:1 Volume:13 Page:203-216
ISSN:2095-1531
Container-title:Chinese Optics
language:en
Short-container-title:中国光学

Author:

LIU Cui-cui 刘翠翠,LIN Nan 林楠,XIONG Cong 熊聪,MAN Yu-xuan 曼玉选,ZHAO Bi-yao 赵碧瑶,LIU Su-ping 刘素平,MA Xiao-yu 马骁宇

Publisher

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Subject

Atomic and Molecular Physics, and Optics

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser;Journal of Semiconductors;2023-10-01

2. InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions;Chinese Optics;2023

3. Research progress of monolithic integration master-oscillation power-amplifiers;Chinese Optics;2023

4. Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si–Si₃N₄ dielectric layer;Journal of Semiconductors;2022-08-01

5. SixNy沉积参数对量子阱混杂效果的影响;Acta Optica Sinica;2022

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