HPM damage mechanism on bipolar transistors-Reference-Cited by-同舟云学术

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HPM damage mechanism on bipolar transistors

Published:2010 Issue:6 Volume:22 Page:1319-1322
ISSN:1001-4322
Container-title:High Power Laser and Particle Beams
language:en
Short-container-title:强激光与粒子束

Author:

Fan Juping 范菊平,Zhang Ling 张玲,Jia Xinzhang 贾新章

Publisher

Shanghai Institute of Optics and Fine Mechanics

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-linear and damage effect on low noise amplifier injected by high power microwave;2023 IEEE 7th International Symposium on Electromagnetic Compatibility (ISEMC);2023-10-20

2. Nonlinear Properties of GaAs/InGaP HBT Under High-Power Microwave Pulse Injection;IEEE Transactions on Plasma Science;2022-09

3. Numerical and Experimental Investigation of the Effects of Dimensional Parameters on Carbon-Nanotube-Coated Copper Plasma Limiter;IEEE Transactions on Plasma Science;2022-05

4. Research on the damage mechanism of typical radio fuze induced by narrow band HPM;2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO);2020-12-07

5. Analysis of transistor damage mechanism and protection measures under lightning voltage;International Journal of Applied Electromagnetics and Mechanics;2019-04-18

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