Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation-Reference-Cited by-同舟云学术

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Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation

Published:2016 Issue:5 Volume:14 Page:051602-51605
ISSN:1671-7694
Container-title:Chinese Optics Letters
language:en
Short-container-title:中国光学快报

Author:

Xiaodan Wang Xiaodan Wang,Yajuan Mo Yajuan Mo,Xionghui Zeng Xionghui Zeng,Hongmin Mao Hongmin Mao,Jianfeng Wang Jianfeng Wang,and Ke Xu and Ke Xu

Publisher

Shanghai Institute of Optics and Fine Mechanics

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. White light emission from Er, Pr co-doped AlN films;Chinese Optics Letters;2019

2. Effect of Al2O3 and La2O3 on structure and spectroscopic properties of Nd-doped sol–gel silica glasses;Journal of Luminescence;2018-12

3. Absolute up-conversion quantum efficiency reaching 4% in β-NaYF4:Yb3+,Er3+ micro-cylinders achieved by Li+/Na+ ion-exchange;Journal of Materials Chemistry C;2018

4. Efficient dual-mode up-conversion and down-shifting emission in β-NaYF4 :Yb3+ ,Er3+ microcrystals via ion exchange;Journal of the American Ceramic Society;2017-04-10

5. Mechanism of cluster dissolution of Yb-doped high-silica lanthanum aluminosilicate glass: Investigation by spectroscopic and structural characterization;Journal of Alloys and Compounds;2017-02

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