Process and properties of oxide IGZO TFT device based on flexible PI substrate-Reference-Cited by-同舟云学术

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Process and properties of oxide IGZO TFT device based on flexible PI substrate

Published:2015 Issue:5 Volume:30 Page:796-800
ISSN:1007-2780
Container-title:Chinese Journal of Liquid Crystals and Displays
language:en
Short-container-title:液晶与显示

Author:

CHEN Long-long 陈龙龙,ZHANG Jian-hua 张建华,LI Xi-feng 李喜峰,SHI Ji-feng 石继锋,SUN Xiang 孙翔

Publisher

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Subject

Instrumentation,Signal Processing,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solution-Processed High Performance Ytterbium-Doped In₂O₃ Thin Film Transistor and Its Application in Common-Source Amplifier;IEEE Transactions on Electron Devices;2023-03

2. Association between cystatin C and diabetic retinopathy among type 2 diabetic patients in China: a Meta-analysis;International Journal of Ophthalmology;2021-09-18

3. Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors;Chinese Journal of Liquid Crystal and Displays;2021

4. 28.4: Invited Paper: A Study on Stiffness Measurement Used for Flexible Display Devices;SID Symposium Digest of Technical Papers;2019-09

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