GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES-Reference-Cited by-同舟云学术

GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

Published:1990-09 Issue:03n04 Volume:01 Page:347-367
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

FURUYA KAZUHITO¹,MIYAMOTO YASUYUKI¹

Affiliation:

1. Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, O-okayama, Meguro-ku, Tokyo 152, Japan

Abstract

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156490000150

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