BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR HYBRID-ELECTRIC VEHICLES

Author:

URCIUOLI D. P.1,VELIADIS VICTOR2

Affiliation:

1. Sensors and Electron Devices Directorate, U. S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA

2. Compound Semiconductor Group, Northrop Grumman Corporation, 1212 Winterson Road, Linthicum, MD, 21090, USA

Abstract

Power electronics in hybrid-electric military ground vehicles require fast fault isolation, and benefit additionally from bi-directional fault isolation. To prevent system damage or failure, maximum fault current interrupt speeds in tens to hundreds of microseconds are necessary. While inherently providing bi-directional fault isolation, mechanical contactors and circuit breakers do not provide adequate actuation speeds, and suffer severe degradation during repeated fault isolation. Instead, it is desired to use a scalable array of solid-state devices as a solid-state circuit breaker (SSCB) having a collectively low conduction loss to provide large current handling capability and fast transition speed for current interruption. Although, both silicon-carbide (SiC) JFET and SiC MOSFET devices having high breakdown voltages and low drain-to-source resistances have been developed, neither device structure alone is capable of reverse blocking at full voltage. Limitations exist for using a dual common-source structure for either device type. Small-scale SSCB experiments were conducted using 0.03 cm2 normally-on SiC VJFETs. Based on results of these tests, a normally-on VJFET device modification is made, and a proposed symmetric SiC JFET is considered for this application.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

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