Affiliation:
1. Corporate R&D, Texas Instruments, Dallas, TX 75265, USA
Abstract
We review the recent developments of GaInP/GaAs heterojunction bipolar transistors (HBTs) used for microwave power, low noise, linear amplification and high temperature applications. Special attention is paid in the comparison of the GaInP HBT results with the more conventional AlGaAs HBTs. The material and processing advantages, as well as the electronic and thermal properties of GaInP are described.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials
Cited by
9 articles.
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