AlGaAs/GaAs HBTs FOR ANALOG AND DIGITAL APPLICATIONS-Reference-Cited by-同舟云学术

AlGaAs/GaAs HBTs FOR ANALOG AND DIGITAL APPLICATIONS

Published:1994-09 Issue:03 Volume:05 Page:213-252
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

WANG KEH-CHUNG¹,NUBLING RANDALL B.¹,PEDROTTI KEN¹,SHENG NENG-HAUNG¹,ASBECK PETER M.²,POULTON KEN³,CORCORAN JOHN³,KNUDSEN KNUD³,YUAN HAN-TZONG⁴,CHANG CHRISTOPHER⁴

Affiliation:

1. Rockwell Science Center, Thousand Oaks, California 91360, USA

2. Department of Electrical and Computer Engineering, University of California, San Diego La Jolla, CA 92093, USA

3. Hewlett-Packard Laboratories, Palo Alto, California 94304, USA

4. Texas Instruments, Dallas, Texas 75265, USA

Abstract

AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technology has emerged as an important IC technology for high performance electronic systems. Many outstanding circuits have been demonstrated as a result of the AlGaAs/GaAs HBTs high speed, high accuracy and its semi-insulating substrate. Several GaAs HBT manufacturing lines have been established; some of which are shipping products. In this paper, we describe AlGaAs/GaAs HBT technology, summarize some key and representative circuits in analog, A/D conversion and digital applications, and provide prospects of GaAs HBT research.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156494000127

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