Affiliation:
1. College of Applied Sciences, Beijing University of Technology, Beijing 100124, P. R. China
2. Fundament Department, Chinese People’s Police University, Langfang 065000, P. R. China
Abstract
Amorphous and crystalline Zn[Formula: see text]CoxS ([Formula: see text], 0.3, 0.5) thin films were grown on sapphire (Al2O3) substrates by pulsed laser deposition at substrate temperature of 25∘C and 800∘C, respectively. The X-ray diffraction results show that the crystalline film has a cubic zinc blende structure and the crystalline quality decreased with increasing Co-doping concentration. The X-ray diffraction and X-ray photoelectron spectroscopy spectra reveal that the samples reached an overdoping state at Co-doping concentration of [Formula: see text]. The absorbance of films increases and the absorption edge shifts to longer wave length direction with increasing Co-doping concentration. The redshift of the band gap energy depends on the Co composition associating with the Urbach energy. Furthermore, the refractive index and dielectric constant increase with increasing Co-doping concentration. The dispersion parameters, such as dispersion energy ([Formula: see text]), oscillator energy ([Formula: see text]), static refractive index ([Formula: see text]), static dielectric constant ([Formula: see text]), interband transition strength moments ([Formula: see text] and [Formula: see text]), oscillator strength [Formula: see text] and oscillator wavelength [Formula: see text], have been analyzed by Wemple–DiDomenico single oscillator model. All these parameters were found to be dependent upon the Co-doping concentration in the Zn[Formula: see text]CoxS thin films.
Funder
the National Natural Science Foundation of China
Publisher
World Scientific Pub Co Pte Lt
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Cited by
2 articles.
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