STABILITY OF ADSORBED HYDROGEN ON Si(100) UNDER CHANGES OF THE SURFACE POTENTIAL

Author:

KRATZER P.1,HAMMER B.12,GREY F.3,NØRSKOV J. K.1

Affiliation:

1. Center for Atomic-Scale Materials Physics and Physics Department, Technical University of Denmark, DK-2800 Lyngby, Denmark

2. Joint Research Center for Atom Technology, 1–1–4 Higashi, Tsukuba, Ibaraki 305, Japan

3. Mikroelektronik Centeret, Technical University of Denmark, DK-2800 Lyngby, Denmark

Abstract

We study the effect of an electrostatic surface potential on the chemisorption energy of H 2 on a Si (100)2×1 surface on the basis of a set of ab initio calculations. We find a sizeable destabilization of the adsorbate, because the clean surface gains in stability compared to the H-terminated surface due to charge transfer between dangling bonds and the space charge region below the surface. We rationalize our results in terms of a simple model and discuss the possibility that potential-induced destabilization is an important ingredient in understanding STM-induced nanolithography.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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