EPITAXIAL GROWTH OF SrF2 ON Ge(111)-c(2×8) AS STUDIED BY PHOTOELECTRON DIFFRACTION AND HOLOGRAPHY-Reference-Cited by-同舟云学术

EPITAXIAL GROWTH OF SrF2 ON Ge(111)-c(2×8) AS STUDIED BY PHOTOELECTRON DIFFRACTION AND HOLOGRAPHY

Published:1999-12 Issue:06 Volume:06 Page:1085-1089
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

OMORI S.¹,KOZAKAI T.¹,NIHEI Y.¹

Affiliation:

1. Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan

Abstract

We have investigated the photoelectron diffraction (PED) from a SrF 2 epitaxial thin film on Ge(111) from the viewpoint of holographic inversion for imaging the atomic structure. The holographic interference fringes were retrieved from the PED pattern including a wide variety of diffraction features via averaging the pattern around each forward-scattering peak. Furthermore, another method for enhancing holographic fringes by subtracting one photoelectron hologram from another at slightly different kinetic energies was theoretically investigated.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X99001190

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