STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY-Reference-Cited by-同舟云学术

STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY

Published:2016-08-15 Issue:04 Volume:24 Page:1750048
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

LI HONGXIA¹,Chen YIMING¹,WU XIN²,XI JUNHUA¹,HUANG YANWEI¹,JI ZHENGUO¹³

Affiliation:

1. Lab of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, P. R. China

2. College of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, P. R. China

3. State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China

Abstract

Recently, resistive random access memory has been continuously investigated in order to replace the flash memory. In this paper, Al/ZnO/Al structured device was fabricated by magnetron sputtering and vacuum thermal evaporation. Systematic study has been conducted to explore the structural, morphological, and the resistive switching properties of ZnO films with Al metal as both bottom and top electrodes. The resistive switching mechanism of Al/ZnO/Al device was analyzed based on the above study.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X17500482

Reference39 articles.

1. Nonvolatile resistive switching memory based on amorphous carbon

2. Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices

3. Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications

4. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

5. Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Ag doping on bipolar switching operation in molybdenum trioxide (MoO3) nanostructures for non-volatile memory;Journal of Alloys and Compounds;2021-05

2. Laser-Assisted Interface Engineering for Functional Interfacial Layer of Al/ZnO/Al Resistive Random Access Memory (RRAM);ACS Applied Materials & Interfaces;2020-06-18

3. Synaptic Behavior in Metal Oxide-Based Memristors;Advances in Memristor Neural Networks - Modeling and Applications;2018-10-03

4. Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption;Japanese Journal of Applied Physics;2018-02-20

5. Ultraviolet-assisted direct patterning and low-temperature formation of flexible ZrO2 resistive switching arrays on PET/ITO substrates;Nanotechnology;2017-11-09