Cu–W FILM STRUCTURE INFLUENCED BY Ar+ ENERGY AND LOW-ENERGY BEAM FLOW BOMBARD DURING PREPARATION BY TWO-ION-BEAM SPUTTERING

Abstract

The influences of Ar[Formula: see text] energy and low-energy sputtering on the structure of Cu–W thin film prepared by double-ion-beam sputtering are studied. Results show that the Cu–W thin film sputtered by ion beam onto a Cu substrate is in the form of an amorphous tungsten framework mechanically mixed with Cu grains when the Cu-target Ar[Formula: see text] energy is within 1–2[Formula: see text]keV and the W-target Ar[Formula: see text] energy is 3[Formula: see text]keV. The Cu grain size increases slightly, increasing the Cu-target Ar[Formula: see text] energy. When the Ar[Formula: see text] energy increases to the critical value ([Formula: see text][Formula: see text]keV), a small amount of Cu is transformed into a single crystal, forming a solid solution with the melting of W. Due to crystal defects and lattice distortion, there is a small shift in the Cu diffraction peak.