Affiliation:
1. PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore-641029, India
Abstract
Near-stoichiometric and stoichiometric Cu(InAl)Se2 (CIAS) thin films have been prepared by successive ionic layer adsorption and reaction (SILAR) onto well-cleaned substrates. energy dispersive X-ray analysis (EDAX) spectra of the prepared thin films enabled to determine the film composition, stoichiometry nature, type of conductivity, lattice constants, volume of the unit cell and density of CIAS thin films. The estimated compositional, structural and electrical parameters are presented and discussed in this paper in detail.
Publisher
World Scientific Pub Co Pte Lt
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics