TEMPERATURE EVOLUTION OF THE PHOTOEMISSION SPECTRA FOR THE Si(111) SURFACE USING THE LASER ANNEALING METHOD-Reference-Cited by-同舟云学术

TEMPERATURE EVOLUTION OF THE PHOTOEMISSION SPECTRA FOR THE Si(111) SURFACE USING THE LASER ANNEALING METHOD

Published:2002-04 Issue:02 Volume:09 Page:769-774
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

HARUYAMA YUICHI¹,MATSUI SHINJI¹,OKUDA TAICHI²,HARASAWA AYUMI²,KINOSHITA TOYOHIKO²,TANAKA SHIN-ICHIRO³,MAKINO HIDEO⁴,WADA KATSUO⁴

Affiliation:

1. Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, 3-1-2 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1205, Japan

2. Synchrotron Radiation Laboratory, Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa-shi, Chiba 277-8581, Japan

3. Faculty of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 464-8602, Japan

4. Silicon Technology LTD, 897-20 Kyowa, Mochizuki, Kitasaku-gun, Nagano 384-2204, Japan

Abstract

We have studied the electronic structures in a wide temperature range for the Si(111) surface using photoemission spectroscopy combined with the laser annealing method. The temperature dependence of the Si 2p surface-sensitive core level photoemission spectra shows some gradual changes along with the thermal broadening above ~1063 K. In addition, the spectral change in the valence band photoemission spectra was also observed across the 7 × 7–1 × 1 transition temperature. These results indicate that the surface band structure is changed along with structural change at the 7 × 7–1 × 1 transition temperature. With increase of the temperature, the shift of the Si 2p core-level photoemission spectra to the lower binding energy side was observed. We discuss the temperature-induced effects such as the thermal broadening and the observed shift.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X02002737

Reference14 articles.

1. Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction

2. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy

3. Low-temperature photoemission study of the surface electronic structure ofSi(111)7×7

4. An Investigation of the Si(111) 7×7 Surface Structure by RHEED

5. Determination of the Si(111)“ 1×1” structure at high temperature by reflection high-energy electron diffraction