LOW TEMPERATURE STUDIES OF THE DIELECTRIC AND ELECTRICAL PARAMETERS OF GLASSY Se90Ge10-xInx

Abstract

The dielectric properties of the system Se 90 Ge 10-x In x (x = 2, 4 and 6 at. %) were studied in the temperature range of 78–273 K and in the frequency range of 400 Hz–20 kHz. The density of localized states N(E) and the activation energy of hopping wk for the samples were deduced at different temperatures. The exponents s, m1 and m2 of the equations σ ac (ω) = Aωs, ε′ = Bωm1 and ε′′ = Cωm2 have been deduced for the samples. The composition and temperature dependence of s, m1, m2, wk and N(E) have been determined. The results are interpreted in terms of the correlated barrier hopping (CBH) model and the concept of localized states.