ULTRAVIOLET ILLUMINATION RESPONSIVITY OF THE Au/n-Si DIODES WITH AND WITHOUT POLY (LINOLENIC ACID)-G-POLY (CAPROLACTONE)-G-POLY (T-BUTYL ACRYLATE) INTERFACIAL LAYER

Abstract

Au/n-Si (MS) and Au/Poly (linolenic acid)-g-poly (caprolactone)-g-poly (t-butyl acrylate) (PLilPCLPtBA)/n-Si (MPS) diodes were fabricated to investigate the electrical and responsivity effects of interfacial layer on the diodes under ultra violet (UV) illumination. Electrospinning method was used for coating of the PLilPCLPtBA polymer layer on n-Si single crystal as nanofibers. Surface formation and nanofiber characteristics of the polymer layer were investigated by an electron microscope. The current-voltage ([Formula: see text]) measurements of the MS and MPS diodes were carried out in dark and under UV (365 nm) illumination conditions at room temperature. Basic electrical parameters of the diodes; such as reverse bias saturation current ([Formula: see text]), zero bias barrier height [Formula: see text], ideality factor ([Formula: see text]), series resistance ([Formula: see text]) and interface state density ([Formula: see text]) were extracted from the experimental [Formula: see text] measurements by thermionic emission and Norde equations. Also, power law of the photocurrents ([Formula: see text]) and responsivity ([Formula: see text]) behavior were obtained and given comparatively.