Structured Roughness of Si Surface Obtained by Molecular Beam Epitaxy on Highly Misoriented Si(111) Substrate

Abstract

We present the results of an X-ray analysis of the surface morphology of a sample obtained by Si MBE onto a higly misoriented Si(111) substrate. X-ray reflectivity and diffuse scattering provide a description of the surface. The amplitude of the surface profile is about 6.6 nm, with a sawtooth shape. Satellites in the diffuse scattering indicate a 215±5 nm periodicity int he miscut direction. The analysis of satellite intensities shows an asymmetry of the surface shape. The results are in agreement with AFM images of the surface.