FABRICATION AND OPTOELECTRONIC PROPERTIES OF MgxZn1-xO ULTRATHIN FILMS BY LANGMUIR–BLODGETT TECHNOLOGY

Abstract

By transferring Mg x Zn 1-x O sol and stearic acid onto a hydrophilic silicon wafer or glass plate, the Langmuir–Blodgett (LB) multilayers of Mg x Zn 1-x O (x:0, 0.2, 0.4) were deposited. After calcinations at 350°C for 0.5 h and at 500°C for 3 h, Mg x Zn 1-x O ultrathin films were fabricated. The optimized parameters for monolayer formation and multilayer deposition were determined by the surface pressure-surface (Π-A) area and the transfer coefficient, respectively. The expended areas of stearic acid with Mg x Zn 1-x O sols under Π-A isotherms inferred the interaction of stearic acid with Mg x Zn 1-x O sols during the formation of monolayer at air–water interface. X-ray diffraction (XRD) was used to determine the crystal structures of Mg x Zn 1-x O nanoparticles and ultrathin films. The surface morphologies of Mg x Zn 1-x O ultrathin films were observed by scanning probe microscopy (AFM). And the optoelectronic properties of Mg x Zn 1-x O were detected and discussed based on photoluminescence (PL) spectra.