PROPERTIES OF LOW-LEVEL Sn-DOPED In2S3 FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

Abstract

Tin-doped indium sulfide films were grown on glass substrates by spray pyrolysis technique at low different Sn:In atomic ratio in the starting solution and optimum experiment conditions ([Formula: see text]C, S:[Formula: see text]). The tin to indium molar ratio Sn:In was varied from 0 to [Formula: see text] in the solution. The obtained films with 2[Formula: see text][Formula: see text]m of thickness, are perfectly adhered, homogenous and uniform on the substrates. X-ray diffraction study reveals that all the films are formed in [Formula: see text] phase grown preferentially along (400). These films lose the orientation with increasing tin doping level. The crystallite size of undoped film was 48.8[Formula: see text]nm, which increases to 59.2[Formula: see text]nm corresponding to the film grown with Sn:[Formula: see text]. Raman analysis shows different peaks related to In2S3 phase. Optical analysis shows that these films are transparent in the visible and near IR with a transmittance higher than 85%. The optical gap energy is found to be direct and varies from 2.61[Formula: see text]eV to 2.76[Formula: see text]eV with the increase of Sn:In ratio from 0 to [Formula: see text]. The films are [Formula: see text] type and Sn doping improves considerably their conductivity. The photoluminescence behavior of In2S3:Sn films was also studied.