BARRIER THICKNESS DEPENDENCE OF OPTICAL ABSORPTION OF EXCITONS IN GaAs COUPLED QUANTUM WIRE
Author:
Affiliation:
1. Physics Department, Cumhuriyet University, 58140 Sivas, Turkey
2. Physics Department, Dokuz Eylül University, Izmir, Turkey
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0218625X04005810
Reference31 articles.
1. Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
2. Excitonic nonlinear optical processes in GaAs quantum-well wires
3. Toward quantum well wires: Fabrication and optical properties
4. Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes
5. MBE Growth and Optical Properties of Novel Corrugated-Interface Quantum Wells
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1. Photoionization cross-section and binding energy of shallow donor impurities in Ga1−xInxNyAs1−y/GaAs quantum wires;Solid State Communications;2011-09
2. Effect of Hydrostatic Pressure on Interband Transitions in Coupled Quantum Wires;Chinese Physics Letters;2007-04
3. Interface-Optical-Phonon Modes in Quasi-one-dimensional Wurtzite Rectangular Quantum Wires;Communications in Theoretical Physics;2006-12
4. POLAR INTERFACE-OPTICAL VIBRATIONAL SPECTRA IN A WURTZITE GaN/AlN RECTANGULAR QUANTUM WIRE;Surface Review and Letters;2006-02
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