EFFECTS OF METHANE GAS FLOW RATE ON THE OPTOELECTRICAL PROPERTIES OF NITROGENATED CARBON THIN FILMS GROWN BY SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION-Reference-Cited by-同舟云学术

EFFECTS OF METHANE GAS FLOW RATE ON THE OPTOELECTRICAL PROPERTIES OF NITROGENATED CARBON THIN FILMS GROWN BY SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

Published:2006-10 Issue:05 Volume:13 Page:585-592
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

RUSOP M.¹,ABDULLAH S.¹,OMER A. M. M.²,ADHIKARI S.²,SOGA T.³,JIMBO T.⁴,UMENO M.²

Affiliation:

1. Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam 40450, Selangor, Malaysia

2. Department of Electronic Engineering, Chubu University, Matsumoto-cho 1200, Kasugai 487-8501, Japan

3. Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

4. Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

Abstract

We have studied the influence of the methane gas ( CH 4) flow rate on the composition and structural and electrical properties of nitrogenated amorphous carbon ( a - C : N ) films grown by surface wave microwave plasma chemical vapor deposition (SWMP-CVD) using Auger electron spectroscopy, X-ray photoelectron spectroscopy, UV-visible spectroscopy, four-point probe and two-probe method resistance measurement. The photoelectrical properties of a - C : N films were also studied. We have succeeded to grow a - C : N films using a novel method of SWMP-CVD at room temperature and found that the deposition rate, bonding and optical and electrical properties of a - C : N films are strongly dependent on the CH 4 gas sources, and the a - C : N films grown at higher CH 4 gas flow rate have relatively high electrical conductivity for both cases of in dark and under illumination condition.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X06008530

Reference27 articles.

1. The Field Emission Characteristics of a-C:H Thin Films Prepared by Helical Resonator Plasma Enhanced Chemical Vapor Deposition

2. Effects of deposition temperature on the properties of hydrogenated tetrahedral amorphous carbon

3. Substrate Temperature Dependence of the Surface Reaction Mechanism of Methane Plasma Chemical Vapor Depositon: Experimental and Ab Initio Molecular Orbital Study

4. Field emission from tetrahedral amorphous carbon

5. Growth Mechanism and Cross-Sectional Structure of Tetrahedral Amorphous Carbon Thin Films