EFFECT OF DOPING THIOUREA IN CdO THIN FILMS FOR ELECTRONIC APPLICATIONS

Abstract

Thiourea (Th)-doped CdO thin films were deposited on glass and crystalline p-type Si (100) substrates for various Th doping concentrations (0.3, 0.5 and 0.7 at.%) using spin coating method. Some structural parameters, such as the crystallite size, lattice constant, dislocation density (δ) and strain in the films were obtained from XRD analysis in which the polycrystalline structure with cubic nature and (111) preferential orientation was confirmed. CdO thin film has not shown any change in crystal phase after Th doping. The optical study emerged that the Th doping caused important changes in the transmittance, absorbance and reflectance spectra. The optical transmittance above 80% range from 720 nm to 800 nm is obtained for 0.3% Th-doped CdO thin films. The rectifying behavior increases with increasing Th content in CdO while Th-doped CdO/p-Si heterojunction exhibits low rectifying character.