INFLUENCE OF ARGON GAS AND COPPER THICKNESS ON THE OPTOELECTRONICAL AND STRUCTURAL PROPERTIES OF AlZnO/Cu/AlZnO THIN FILM

Abstract

AlZnO/Cu/AlZnO multilayer films were deposited on glass substrate by RF magnetron sputtering of AlZnO target and DC magnetron sputtering of copper target at room temperature. Subsequently, some of the samples have been annealed for 20[Formula: see text]min in vacuum or air at 350∘C for 20[Formula: see text]min. The optical, surface morphology, crystal structure, and electrical characteristics have been examined by spectrophotometry, atomic force microscope, field emission scanning electron microscopy, X-ray diffraction, and four-point probe as a function of argon gas flux, and copper thickness. It is found that the crystallinity of AlZnO and Cu layers improve by increasing the thickness of copper film. We have found that the maximum value of figure of merit is related to the copper thickness of 8[Formula: see text]nm. Finally, the AlZnO/Cu/AlZnO thin films have been processed with alumina polishing solution by ultrasonic method. The optimum process parameters have been obtained to provide a very smooth surface.