STRUCTURAL PHASE TRANSITION, ELASTIC AND ELECTRONIC PROPERTIES OF CuXSe2(X = In, Ga) CHALCOPYRITE

Author:

BOUGUETAIA T.12,ABIDRI B.1,BENBAHI B.2,RACHED D.1,HIADSI S.2,RABAH M.1

Affiliation:

1. Laboratoires des Matériaux Magnétiques, Université Djillali Liabès, 22000 Sidi Bel-Abbès, Algérie

2. Laboratoire de Microscopie Électronique, Université des Sciences et la Technologie d'Oran, USTO, 31000 Oran, Algérie

Abstract

The structural, elastic and electronic properties of chalcopyrite compound CuInSe2 and CuGaSe2 have been investigated using the full-potential linearized muffin-tin orbital method (FP-LMTO) within the frame of density functional theory (DFT). In this approach, the local density approximation is used for the exchange-correlation potential using Perdew–Wang parametrization. The equilibrium lattice parameters, bulk modulus, transition pressure, elastic constants and their related parameters such as Poisson's ratio, Young modulus, shear modulus and Debye temperature were calculated and compared with available experimental and theoretical data. They are in reasonable agreement. In this paper the electronic properties are treated with GGA + U approach, which brings out the important role played by the d-state of noble metal (Cu) and give the correct nature of the energy band gap. Our obtained results show that both compounds exhibit semi-conductor behaviour with direct band gap.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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